Next-generation electronics that utilize wide and ultrawide bandgap semiconductors are rapidly advancing many technologies by providing more compact and efficient devices. However, thermal management remains a significant challenge in achieving the maximum output power of the devices. Aggressive thermal management strategies are essential to overcome these thermal limitations. This talk will discuss recent progress in heat transport in wide bandgap semiconductors and interfaces: Part 1 focuses on achieving the intrinsic high thermal conductivity of semiconductors, where we specifically discuss wafer-scale high thermal conductivity materials that are capable of mass production; Part 2 discusses the high thermal boundary conductance (TBC) of technologically-important interfaces involving high thermal conductivity semiconductors that are integrated by room-temperature bonding; Part 3 discusses advanced thermal metrology for large-area mapping thermal boundary resistances of semiconductor interfaces. Thermal conductive integration of high thermal conductivity semiconductors facilitates addressing the thermal challenges and contributing to high-performance, high output power, and high reliability electronic devices.